MOCVD growth of GaN-based high electron mobility transistor structures /
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| Autor principal: | |
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| Formato: | Recurso Electrónico livro electrónico |
| Idioma: | inglês |
| Publicado em: |
Linkoping, Sweden :
Linkoping University,
2015.
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| Colecção: | Linkoping studies in science and technology. Dissertations ;
Number 1662. |
| Assuntos: | |
| Acesso em linha: | Click to View |
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