MOCVD growth of GaN-based high electron mobility transistor structures /
I tiakina i:
| Kaituhi matua: | |
|---|---|
| Hōputu: | Tāhiko īPukapuka |
| Reo: | Ingarihi |
| I whakaputaina: |
Linkoping, Sweden :
Linkoping University,
2015.
|
| Rangatū: | Linkoping studies in science and technology. Dissertations ;
Number 1662. |
| Ngā marau: | |
| Urunga tuihono: | Click to View |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
|
Ngā tūemi rite: MOCVD growth of GaN-based high electron mobility transistor structures /
- MOCVD growth of GaN-based high electron mobility transistor structures /
- MOCVD growth of GaN-based high electron mobility transistor structures /
- MOCVD growth of GaN-based high electron mobility transistor structures /
- CVD solutions for new directions in SiC and GaN epitaxy /
- CVD solutions for new directions in SiC and GaN epitaxy /
- Semiconductor materials an introduction to basic principles /