MOCVD growth of GaN-based high electron mobility transistor structures /
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| Autor principal: | |
|---|---|
| Format: | Electrònic eBook |
| Idioma: | anglès |
| Publicat: |
Linkoping, Sweden :
Linkoping University,
2015.
|
| Col·lecció: | Linkoping studies in science and technology. Dissertations ;
Number 1662. |
| Matèries: | |
| Accés en línia: | Click to View |
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