MOCVD growth of GaN-based high electron mobility transistor structures /
Furkejuvvon:
| Váldodahkki: | |
|---|---|
| Materiálatiipa: | Elektrovnnalaš E-girji |
| Giella: | eaŋgalasgiella |
| Almmustuhtton: |
Linkoping, Sweden :
Linkoping University,
2015.
|
| Ráidu: | Linkoping studies in science and technology. Dissertations ;
Number 1662. |
| Fáttát: | |
| Liŋkkat: | Click to View |
| Fáddágilkorat: |
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|
| Olgguldas hápmi: | 1 online resource (81 pages) : illustrations (some color). |
|---|---|
| Bibliografiija: | Includes bibliographical references. |
| ISBN: | 9789175190730 |
| ISSN: | 0345-7524 ; |