בקשת ציטוטים
APA ציטוט
Chen, J. (2015). MOCVD growth of GaN-based high electron mobility transistor structures. Linkoping University.
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Chicago Style (17th ed.) Citation
Chen, Jr-Tai. MOCVD Growth of GaN-based High Electron Mobility Transistor Structures. Linkoping, Sweden: Linkoping University, 2015.
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ציטוט MLA
Chen, Jr-Tai. MOCVD Growth of GaN-based High Electron Mobility Transistor Structures. Linkoping University, 2015.
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