MOCVD growth of GaN-based high electron mobility transistor structures /
Պահպանված է:
| Հիմնական հեղինակ: | |
|---|---|
| Ձևաչափ: | Էլեկտրոնային էլ․ գիրք |
| Լեզու: | անգլերեն |
| Հրապարակվել է: |
Linkoping, Sweden :
Linkoping University,
2015.
|
| Շարք: | Linkoping studies in science and technology. Dissertations ;
Number 1662. |
| Խորագրեր: | |
| Առցանց հասանելիություն: | Click to View |
| Ցուցիչներ: |
Չկան պիտակներ, Եղեք առաջինը, ով նշում է այս գրառումը!
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MARC
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| 100 | 1 | |a Chen, Jr-Tai, |e author. | |
| 245 | 1 | 0 | |a MOCVD growth of GaN-based high electron mobility transistor structures / |c Jr-Tai Chen. |
| 264 | 1 | |a Linkoping, Sweden : |b Linkoping University, |c 2015. | |
| 264 | 4 | |c 2015 | |
| 300 | |a 1 online resource (81 pages) : |b illustrations (some color). | ||
| 336 | |a text |2 rdacontent | ||
| 337 | |a computer |2 rdamedia | ||
| 338 | |a online resource |2 rdacarrier | ||
| 490 | 1 | |a Linkoping Studies in Science and Technology Dissertations, |x 0345-7524 ; |v Number 1662 | |
| 504 | |a Includes bibliographical references. | ||
| 588 | |a Description based on online resource; title from PDF title page (ebrary, viewed May 5, 2015). | ||
| 590 | |a Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries. | ||
| 650 | 0 | |a Semiconductors |x Materials. | |
| 650 | 0 | |a Epitaxy. | |
| 655 | 4 | |a Electronic books. | |
| 710 | 2 | |a Semiconductor Materials Division. |b Department of Physics, Chemistry, and Biology. |b Linkoping University, |e issuing body. | |
| 797 | 2 | |a ProQuest (Firm) | |
| 830 | 0 | |a Linkoping studies in science and technology. |p Dissertations ; |v Number 1662. | |
| 856 | 4 | 0 | |u http://ebookcentral.proquest.com/lib/daystar-ebooks/detail.action?docID=3328196 |z Click to View |
| 999 | |c 242639 |d 242638 | ||