MOCVD growth of GaN-based high electron mobility transistor structures /

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Bibliographic Details
Main Author: Chen, Jr-Tai (Author)
Format: Electronic eBook
Language:English
Published: Linköping, Sweden : Linköping University, 2015.
Series:Linköping studies in science and technology. Dissertations ; Number 1662.
Subjects:
Online Access:An electronic book accessible through the World Wide Web; click to view
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