MOCVD growth of GaN-based high electron mobility transistor structures /
Gardado en:
| Autor Principal: | |
|---|---|
| Formato: | Electrónico eBook |
| Idioma: | inglés |
| Publicado: |
Linköping, Sweden :
Linköping University,
2015.
|
| Series: | Linköping studies in science and technology. Dissertations ;
Number 1662. |
| Subjects: | |
| Acceso en liña: | An electronic book accessible through the World Wide Web; click to view |
| Tags: |
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