MOCVD growth of GaN-based high electron mobility transistor structures /

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Bibliografski detalji
Glavni autor: Chen, Jr-Tai (Autor)
Format: Elektronički e-knjiga
Jezik:engleski
Izdano: Linköping, Sweden : Linköping University, 2015.
Serija:Linköping studies in science and technology. Dissertations ; Number 1662.
Teme:
Online pristup:An electronic book accessible through the World Wide Web; click to view
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Opis
Opis fizičkog objekta:1 online resource (81 pages) : illustrations (some color).
Bibliografija:Includes bibliographical references.
ISBN:9789175190730 (ebook)
ISSN:0345-7524 ;