MOCVD growth of GaN-based high electron mobility transistor structures /

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Bibliographic Details
Main Author:	Chen, Jr-Tai (Author)
Format:	Electronic eBook
Language:	English
Published:	Linköping, Sweden : Linköping University, 2015.
Series:	Linköping studies in science and technology. Dissertations ; Number 1662.
Subjects:	Semiconductors > Materials. Epitaxy. Electronic books.
Online Access:	An electronic book accessible through the World Wide Web; click to view
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