MOCVD growth of GaN-based high electron mobility transistor structures /
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| Main Author: | |
|---|---|
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Linköping, Sweden :
Linköping University,
2015.
|
| Series: | Linköping studies in science and technology. Dissertations ;
Number 1662. |
| Subjects: | |
| Online Access: | An electronic book accessible through the World Wide Web; click to view |
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| 100 | 1 | |a Chen, Jr-Tai, |e author. | |
| 245 | 1 | 0 | |a MOCVD growth of GaN-based high electron mobility transistor structures / |c Jr-Tai Chen. |
| 264 | 1 | |a Linköping, Sweden : |b Linköping University, |c 2015. | |
| 264 | 4 | |c ©2015 | |
| 300 | |a 1 online resource (81 pages) : |b illustrations (some color). | ||
| 336 | |a text |2 rdacontent | ||
| 337 | |a computer |2 rdamedia | ||
| 338 | |a online resource |2 rdacarrier | ||
| 490 | 1 | |a Linköping Studies in Science and Technology Dissertations, |x 0345-7524 ; |v Number 1662 | |
| 504 | |a Includes bibliographical references. | ||
| 588 | |a Description based on online resource; title from PDF title page (ebrary, viewed May 5, 2015). | ||
| 590 | |a Electronic reproduction. Palo Alto, Calif. : ebrary, 2015. Available via World Wide Web. Access may be limited to ebrary affiliated libraries. | ||
| 650 | 0 | |a Semiconductors |x Materials. | |
| 650 | 0 | |a Epitaxy. | |
| 655 | 0 | |a Electronic books. | |
| 710 | 2 | |a Semiconductor Materials Division. |b Department of Physics, Chemistry, and Biology. |b Linköping University, |e issuing body. | |
| 797 | 2 | |a ebrary. | |
| 830 | 0 | |a Linköping studies in science and technology. |p Dissertations ; |v Number 1662. | |
| 856 | 4 | 0 | |u http://site.ebrary.com/lib/daystar/Doc?id=11049571 |z An electronic book accessible through the World Wide Web; click to view |
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