MOCVD growth of GaN-based high electron mobility transistor structures /

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Bibliografske podrobnosti
Glavni avtor: Chen, Jr-Tai (Author)
Format: Elektronski eKnjiga
Jezik:angleščina
Izdano: Linköping, Sweden : Linköping University, 2015.
Serija:Linköping studies in science and technology. Dissertations ; Number 1662.
Teme:
Online dostop:An electronic book accessible through the World Wide Web; click to view
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