MOCVD growth of GaN-based high electron mobility transistor structures /
Sábháilte in:
| Príomhchruthaitheoir: | |
|---|---|
| Formáid: | Leictreonach Ríomhleabhar |
| Teanga: | Béarla |
| Foilsithe / Cruthaithe: |
Linköping, Sweden :
Linköping University,
2015.
|
| Sraith: | Linköping studies in science and technology. Dissertations ;
Number 1662. |
| Ábhair: | |
| Rochtain ar líne: | An electronic book accessible through the World Wide Web; click to view |
| Clibeanna: |
Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!
|
Search Result 1
MOCVD growth of GaN-based high electron mobility transistor structures /
Foilsithe / Cruthaithe 2015.
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Leictreonach
Ríomhleabhar
Search Result 2
MOCVD growth of GaN-based high electron mobility transistor structures /
Foilsithe / Cruthaithe 2015.
An electronic book accessible through the World Wide Web; click to view
Leictreonach
Ríomhleabhar
Search Result 3
MOCVD growth of GaN-based high electron mobility transistor structures /
Foilsithe / Cruthaithe 2015.
Click to View
Leictreonach
Ríomhleabhar