MOCVD growth of GaN-based high electron mobility transistor structures /
-д хадгалсан:
| Үндсэн зохиолч: | |
|---|---|
| Формат: | Цахим Цахим ном |
| Хэл сонгох: | англи |
| Хэвлэсэн: |
Linköping, Sweden :
Linköping University,
2015.
|
| Цуврал: | Linköping studies in science and technology. Dissertations ;
Number 1662. |
| Нөхцлүүд: | |
| Онлайн хандалт: | An electronic book accessible through the World Wide Web; click to view |
| Шошгууд: |
Шошго байхгүй, Энэхүү баримтыг шошголох эхний хүн болох!
|
Ижил төстэй зүйлс: MOCVD growth of GaN-based high electron mobility transistor structures /
- MOCVD growth of GaN-based high electron mobility transistor structures /
- MOCVD growth of GaN-based high electron mobility transistor structures /
- MOCVD growth of GaN-based high electron mobility transistor structures /
- CVD solutions for new directions in SiC and GaN epitaxy /
- CVD solutions for new directions in SiC and GaN epitaxy /
- Semiconductor materials an introduction to basic principles /