MOCVD growth of GaN-based high electron mobility transistor structures /
Salvato in:
| Autore principale: | |
|---|---|
| Natura: | Elettronico eBook |
| Lingua: | inglese |
| Pubblicazione: |
Linköping, Sweden :
Linköping University,
2015.
|
| Serie: | Linköping studies in science and technology. Dissertations ;
Number 1662. |
| Soggetti: | |
| Accesso online: | An electronic book accessible through the World Wide Web; click to view |
| Tags: |
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
Documenti analoghi: MOCVD growth of GaN-based high electron mobility transistor structures /
- MOCVD growth of GaN-based high electron mobility transistor structures /
- CVD solutions for new directions in SiC and GaN epitaxy /
- Semiconductor materials an introduction to basic principles /
- Silicon technologies ion implantation and thermal treatment /
- Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces /
- Nitride semiconductor devices fundamentals and applications /