MOCVD growth of GaN-based high electron mobility transistor structures /
Furkejuvvon:
| Váldodahkki: | |
|---|---|
| Materiálatiipa: | Elektrovnnalaš E-girji |
| Giella: | eaŋgalasgiella |
| Almmustuhtton: |
Linköping, Sweden :
Linköping University,
2015.
|
| Ráidu: | Linköping studies in science and technology. Dissertations ;
Number 1662. |
| Fáttát: | |
| Liŋkkat: | An electronic book accessible through the World Wide Web; click to view |
| Fáddágilkorat: |
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|
Search Result 1
MOCVD growth of GaN-based high electron mobility transistor structures /
Almmustuhtton 2015.
An electronic book accessible through the World Wide Web; click to view
Elektrovnnalaš
E-girji
Search Result 2
MOCVD growth of GaN-based high electron mobility transistor structures /
Almmustuhtton 2015.
Click to View
Elektrovnnalaš
E-girji
Search Result 3
MOCVD growth of GaN-based high electron mobility transistor structures /
Almmustuhtton 2015.
Click to View
Elektrovnnalaš
E-girji