MOCVD growth of GaN-based high electron mobility transistor structures /
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| Hlavní autor: | |
|---|---|
| Médium: | Elektronický zdroj E-kniha |
| Jazyk: | angličtina |
| Vydáno: |
Linkoping, Sweden :
Linkoping University,
2015.
|
| Edice: | Linkoping studies in science and technology. Dissertations ;
Number 1662. |
| Témata: | |
| On-line přístup: | Click to View |
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