MOCVD growth of GaN-based high electron mobility transistor structures /
Wedi'i Gadw mewn:
| Prif Awdur: | |
|---|---|
| Fformat: | Electronig eLyfr |
| Iaith: | Saesneg |
| Cyhoeddwyd: |
Linkoping, Sweden :
Linkoping University,
2015.
|
| Cyfres: | Linkoping studies in science and technology. Dissertations ;
Number 1662. |
| Pynciau: | |
| Mynediad Ar-lein: | Click to View |
| Tagiau: |
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MOCVD growth of GaN-based high electron mobility transistor structures /
Cyhoeddwyd 2015
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Electronig
eLyfr
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