APA引文
Chen, J. (2015). MOCVD growth of GaN-based high electron mobility transistor structures. Linkoping University.
Chicago Style (17th ed.) Citation
Chen, Jr-Tai. MOCVD Growth of GaN-based High Electron Mobility Transistor Structures. Linkoping, Sweden: Linkoping University, 2015.
MLA引文
Chen, Jr-Tai. MOCVD Growth of GaN-based High Electron Mobility Transistor Structures. Linkoping University, 2015.
警告：這些引文格式不一定是100％准確.