MOCVD growth of GaN-based high electron mobility transistor structures /
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| Glavni autor: | |
|---|---|
| Format: | Elektronički e-knjiga |
| Jezik: | engleski |
| Izdano: |
Linkoping, Sweden :
Linkoping University,
2015.
|
| Serija: | Linkoping studies in science and technology. Dissertations ;
Number 1662. |
| Teme: | |
| Online pristup: | Click to View |
| Oznake: |
Bez oznaka, Budi prvi tko označuje ovaj zapis!
|
| Opis fizičkog objekta: | 1 online resource (81 pages) : illustrations (some color). |
|---|---|
| Bibliografija: | Includes bibliographical references. |
| ISBN: | 9789175190730 |
| ISSN: | 0345-7524 ; |