MOCVD growth of GaN-based high electron mobility transistor structures /
Shranjeno v:
| Glavni avtor: | |
|---|---|
| Format: | Elektronski eKnjiga |
| Jezik: | angleščina |
| Izdano: |
Linkoping, Sweden :
Linkoping University,
2015.
|
| Serija: | Linkoping studies in science and technology. Dissertations ;
Number 1662. |
| Teme: | |
| Online dostop: | Click to View |
| Oznake: |
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