CVD solutions for new directions in SiC and GaN epitaxy /
Uloženo v:
| Hlavní autor: | |
|---|---|
| Médium: | Elektronický zdroj E-kniha |
| Jazyk: | angličtina |
| Vydáno: |
Linkoping, Sweden :
Semiconductor Materials Division Department of Physics, Chemistry and Biology (IFM), Linkoping University,
2015.
|
| Edice: | Linkoping studies in science and technology. Dissertations ;
Number 1654. |
| Témata: | |
| On-line přístup: | Click to View |
| Tagy: |
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
|
Podobné jednotky: CVD solutions for new directions in SiC and GaN epitaxy /
- CVD solutions for new directions in SiC and GaN epitaxy /
- Nitride semiconductor devices fundamentals and applications /
- Nitride semiconductor devices fundamentals and applications /
- Device characterization and modeling of large-size GaN HEMTs
- Device characterization and modeling of large-size GaN HEMTs
- GaN transistors for efficient power conversion /