CVD solutions for new directions in SiC and GaN epitaxy /
Сохранить в:
| Главный автор: | |
|---|---|
| Формат: | Электронный ресурс eКнига |
| Язык: | английский |
| Опубликовано: |
Linkoping, Sweden :
Semiconductor Materials Division Department of Physics, Chemistry and Biology (IFM), Linkoping University,
2015.
|
| Серии: | Linkoping studies in science and technology. Dissertations ;
Number 1654. |
| Предметы: | |
| Online-ссылка: | Click to View |
| Метки: |
Нет меток, Требуется 1-ая метка записи!
|
Схожие документы: CVD solutions for new directions in SiC and GaN epitaxy /
- CVD solutions for new directions in SiC and GaN epitaxy /
- Nitride semiconductor devices fundamentals and applications /
- Nitride semiconductor devices fundamentals and applications /
- Device characterization and modeling of large-size GaN HEMTs
- Device characterization and modeling of large-size GaN HEMTs
- GaN transistors for efficient power conversion /