Цитирование APA (7-е изд.)
Li, X. (2015). CVD solutions for new directions in SiC and GaN epitaxy. Semiconductor Materials Division Department of Physics, Chemistry and Biology (IFM), Linkoping University.
Цитирование в стиле Чикаго (17-е изд.)
Li, Xun. CVD Solutions for New Directions in SiC and GaN Epitaxy. Linkoping, Sweden: Semiconductor Materials Division Department of Physics, Chemistry and Biology (IFM), Linkoping University, 2015.
Цитирование MLA (9-е изд.)
Li, Xun. CVD Solutions for New Directions in SiC and GaN Epitaxy. Semiconductor Materials Division Department of Physics, Chemistry and Biology (IFM), Linkoping University, 2015.
Предупреждение: эти цитированмия не могут быть всегда правильны на 100%.