Terrestrial neutron-induced soft errors in advanced memory devices
I tiakina i:
| Kaituhi rangatōpū: | |
|---|---|
| Ētahi atu kaituhi: | |
| Hōputu: | Tāhiko īPukapuka |
| Reo: | Ingarihi |
| I whakaputaina: |
Hackensack, NJ :
World Scientific,
c2008.
|
| Ngā marau: | |
| Urunga tuihono: | An electronic book accessible through the World Wide Web; click to view |
| Ngā Tūtohu: |
Kāore He Tūtohu, Me noho koe te mea tuatahi ki te tūtohu i tēnei pūkete!
|
MARC
| LEADER | 00000nam a2200000Ia 4500 | ||
|---|---|---|---|
| 001 | 0000103312 | ||
| 005 | 20171002055354.0 | ||
| 006 | m u | ||
| 007 | cr cn||||||||| | ||
| 008 | 071223s2008 njua sb 001 0 eng d | ||
| 020 | |z 9789812778819 | ||
| 020 | |z 9812778810 | ||
| 035 | |a (CaPaEBR)ebr10255560 | ||
| 035 | |a (OCoLC)560636099 | ||
| 040 | |a CaPaEBR |c CaPaEBR | ||
| 050 | 1 | 4 | |a TK7895.M4 |b T47 2008eb |
| 245 | 0 | 0 | |a Terrestrial neutron-induced soft errors in advanced memory devices |h [electronic resource] / |c Takashi Nakamura ... [et al.]. |
| 260 | |a Hackensack, NJ : |b World Scientific, |c c2008. | ||
| 300 | |a xxii, 343 p. : |b ill. (some col.) | ||
| 504 | |a Includes bibliographical references (p. 291-315) and index. | ||
| 533 | |a Electronic reproduction. |b Palo Alto, Calif. : |c ebrary, |d 2009. |n Available via World Wide Web. |n Access may be limited to ebrary affiliated libraries. | ||
| 650 | 0 | |a Semiconductor storage devices. | |
| 650 | 0 | |a Neutron irradiation. | |
| 650 | 0 | |a Radiation dosimetry. | |
| 650 | 0 | |a Nuclear physics. | |
| 655 | 7 | |a Electronic books. |2 local | |
| 700 | 1 | |a Nakamura, Takashi, |d 1939- | |
| 710 | 2 | |a ebrary, Inc. | |
| 856 | 4 | 0 | |u http://site.ebrary.com/lib/daystar/Doc?id=10255560 |z An electronic book accessible through the World Wide Web; click to view |
| 908 | |a 170314 | ||
| 942 | 0 | 0 | |c EB |
| 999 | |c 92464 |d 92464 | ||