Terrestrial neutron-induced soft errors in advanced memory devices

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Bibliographic Details
Corporate Author: ebrary, Inc
Other Authors: Nakamura, Takashi, 1939-
Format: Electronic eBook
Language:English
Published: Hackensack, NJ : World Scientific, c2008.
Subjects:
Online Access:An electronic book accessible through the World Wide Web; click to view
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020 |z 9789812778819 
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035 |a (CaPaEBR)ebr10255560 
035 |a (OCoLC)560636099 
040 |a CaPaEBR  |c CaPaEBR 
050 1 4 |a TK7895.M4  |b T47 2008eb 
245 0 0 |a Terrestrial neutron-induced soft errors in advanced memory devices  |h [electronic resource] /  |c Takashi Nakamura ... [et al.]. 
260 |a Hackensack, NJ :  |b World Scientific,  |c c2008. 
300 |a xxii, 343 p. :  |b ill. (some col.) 
504 |a Includes bibliographical references (p. 291-315) and index. 
533 |a Electronic reproduction.  |b Palo Alto, Calif. :  |c ebrary,  |d 2009.  |n Available via World Wide Web.  |n Access may be limited to ebrary affiliated libraries. 
650 0 |a Semiconductor storage devices. 
650 0 |a Neutron irradiation. 
650 0 |a Radiation dosimetry. 
650 0 |a Nuclear physics. 
655 7 |a Electronic books.  |2 local 
700 1 |a Nakamura, Takashi,  |d 1939- 
710 2 |a ebrary, Inc. 
856 4 0 |u http://site.ebrary.com/lib/daystar/Doc?id=10255560  |z An electronic book accessible through the World Wide Web; click to view 
908 |a 170314 
942 0 0 |c EB 
999 |c 92464  |d 92464