CVD solutions for new directions in SiC and GaN epitaxy /

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Kaituhi matua: Li, Xun (Author)
Hōputu: Tāhiko īPukapuka
Reo:Ingarihi
I whakaputaina: Linkoping, Sweden : Semiconductor Materials Division Department of Physics, Chemistry and Biology (IFM), Linkoping University, 2015.
Rangatū:Linkoping studies in science and technology. Dissertations ; Number 1654.
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245 1 0 |a CVD solutions for new directions in SiC and GaN epitaxy /  |c Xun Li. 
264 1 |a Linkoping, Sweden :  |b Semiconductor Materials Division Department of Physics, Chemistry and Biology (IFM), Linkoping University,  |c 2015. 
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490 1 |a Linkoping Studies in Science and Technology. Dissertations,  |x 0345-7524 ;  |v Number 1654 
504 |a Includes bibliographical references. 
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590 |a Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries. 
650 0 |a Wide gap semiconductors  |x Materials. 
650 0 |a Gallium nitride. 
650 0 |a Optoelectronic devices. 
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