Device characterization and modeling of large-size GaN HEMTs

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Bibliographic Details
Main Author:	Flores, Jaime Alberto Zamudio
Corporate Author:	ProQuest (Firm)
Format:	Thesis Electronic eBook
Language:	English
Published:	Kassel : Kassel University Press, 2012.
Subjects:	Modulation-doped field-effect transistors. Gallium nitride. Wide gap semiconductors. Electronic books.
Online Access:	Click to View
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100	1		\|a Flores, Jaime Alberto Zamudio.
245	1	0	\|a Device characterization and modeling of large-size GaN HEMTs \|h [electronic resource] / \|c Jaime Alberto Zamudio Flores.
260			\|a Kassel : \|b Kassel University Press, \|c 2012.
300			\|a xxxiii, 221 p. : \|b ill.
502			\|a Dissertation--Kassel Univ., 2012.
504			\|a Includes bibliographical references.
533			\|a Electronic reproduction. Ann Arbor, MI : ProQuest, 2015. Available via World Wide Web. Access may be limited to ProQuest affiliated libraries.
650		0	\|a Modulation-doped field-effect transistors.
650		0	\|a Gallium nitride.
650		0	\|a Wide gap semiconductors.
655		4	\|a Electronic books.
710	2		\|a ProQuest (Firm)
856	4	0	\|u http://ebookcentral.proquest.com/lib/daystar-ebooks/detail.action?docID=3320073 \|z Click to View
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