High-k gate dielectrics for CMOS technology
Wedi'i Gadw mewn:
| Awdur Corfforaethol: | |
|---|---|
| Awduron Eraill: | , |
| Fformat: | Electronig eLyfr |
| Iaith: | Saesneg |
| Cyhoeddwyd: |
Weinheim :
Wiley-VCH,
2012.
|
| Pynciau: | |
| Mynediad Ar-lein: | An electronic book accessible through the World Wide Web; click to view |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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MARC
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| 007 | cr cn||||||||| | ||
| 008 | 130212s2012 gw a sb 001 0 eng d | ||
| 020 | |z 9783527330324 | ||
| 020 | |z 9783527646371 (e-book) | ||
| 035 | |a (CaPaEBR)ebr10653595 | ||
| 035 | |a (OCoLC)798536325 | ||
| 040 | |a CaPaEBR |c CaPaEBR | ||
| 050 | 1 | 4 | |a QC585 |b .H54 2012eb |
| 082 | 0 | 4 | |a 538.24 |2 23 |
| 245 | 0 | 0 | |a High-k gate dielectrics for CMOS technology |h [electronic resource] / |c edited by Gang He and Zhaoqi Sun. |
| 260 | |a Weinheim : |b Wiley-VCH, |c 2012. | ||
| 300 | |a xxxi, 558 p. : |b ill. (some col.) | ||
| 504 | |a Includes bibliographical references and index. | ||
| 505 | 0 | |a pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions. | |
| 533 | |a Electronic reproduction. |b Palo Alto, Calif. : |c ebrary, |d 2013. |n Available via World Wide Web. |n Access may be limited to ebrary affiliated libraries. | ||
| 650 | 0 | |a Dielectrics. | |
| 650 | 0 | |a Metal oxide semiconductors, Complementary. | |
| 655 | 7 | |a Electronic books. |2 local | |
| 700 | 1 | |a He, Gang. | |
| 700 | 1 | |a Sun, Zhaoqi. | |
| 710 | 2 | |a ebrary, Inc. | |
| 856 | 4 | 0 | |u http://site.ebrary.com/lib/daystar/Doc?id=10653595 |z An electronic book accessible through the World Wide Web; click to view |
| 908 | |a 170314 | ||
| 942 | 0 | 0 | |c EB |
| 999 | |c 151941 |d 151941 | ||