Terrestrial neutron-induced soft errors in advanced memory devices
Wedi'i Gadw mewn:
| Awdur Corfforaethol: | |
|---|---|
| Awduron Eraill: | |
| Fformat: | Electronig eLyfr |
| Iaith: | Saesneg |
| Cyhoeddwyd: |
Hackensack, NJ :
World Scientific,
c2008.
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| Pynciau: | |
| Mynediad Ar-lein: | An electronic book accessible through the World Wide Web; click to view |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
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Eitemau Tebyg: Terrestrial neutron-induced soft errors in advanced memory devices
- High performance memory testing design principles, fault modeling, and self-test /
- High density data storage principle, technology, and materials /
- Non-volatile memories /
- Memory systems cache, DRAM, disk /
- Data Storage faster access to smaller bits.
- USB mass storage designing and programming devices and embedded hosts /