Device characterization and modeling of large-size GaN HEMTs
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| Glavni autor: | |
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| Autor kompanije: | |
| Format: | Disertacija Elektronički e-knjiga |
| Jezik: | engleski |
| Izdano: |
Kassel :
Kassel University Press,
2012.
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| Teme: | |
| Online pristup: | Click to View |
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Slični predmeti: Device characterization and modeling of large-size GaN HEMTs
- Device characterization and modeling of large-size GaN HEMTs
- GaN transistors for efficient power conversion /
- GaN transistors for efficient power conversion /
- CVD solutions for new directions in SiC and GaN epitaxy /
- CVD solutions for new directions in SiC and GaN epitaxy /
- GaN-based materials and devices growth, fabrication, characterization and performance /