A one-semester course in modeling of VLSI interconnections /

A one-semester course in modeling of VLSI interconnections /

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Quantitative understanding of the parasitic capacitances and inductances and the resultant propagation delays and crosstalk phenomena associated with the metallic interconnections on the very large scale integrated (VLSI) circuits has become extremely important for the optimum design of the state-of...

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Bibliographic Details
Main Author: Goel, Ashok K., 1953- (Author)
Format: Electronic eBook
Language:English
Published: New York, [New York] (222 East 46th Street, New York, NY 10017) : Momentum Press, 2015.
Series:Electronic circuits and semiconductor devices collection.
Subjects:
Integrated circuits > Very large scale integration > Mathematical models.
VLSI
Integrated Circuits
Interconnections
Copper Interconnections
Propagation Delays
Crosstalk
Modeling
Electromigration
Capacitances
Inductances
Nanotechnology
Online Access:An electronic book accessible through the World Wide Web; click to view
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Table of Contents:
  • 1. Introductory concepts
  • 1.1 Metallic interconnections
  • 1.2 Simplified modeling of resistive interconnections as ladder networks
  • 1.3 Propagation modes in a metallic interconnection
  • 1.4 Slow-wave mode
  • 1.5 Propagation delays
  • 2. Modeling of interconnection resistances, capacitances, and inductances
  • 2.1 Interconnection resistance
  • 2.2 Modeling of resistance for a copper interconnection
  • 2.3 Interconnection capacitances
  • 2.4 The Green's function method, Method of images
  • 2.5 Green's function method, Fourier integral approach
  • 2.6 Interconnection inductances
  • 2.7 Inductance extraction using FastHenry
  • 2.8 Approximate equations for capacitances
  • 2.9 Approximate equations for interconnection capacitances and inductances on silicon and GaAs substrates
  • 3. Modeling of interconnection delays
  • 3.1 Metal-insulator-semiconductor microstrip line model of an interconnection
  • 3.2 Transmission line analysis of single-level interconnections
  • 3.3 Transmission line model for multilevel interconnections
  • 3.4 Modeling of parallel and crossing interconnections
  • 3.5 Modeling of very-high-frequency losses in interconnections
  • 3.6 Compact modeling of interconnection delays
  • 3.7 Modeling of active interconnections
  • 4. Modeling of interconnection crosstalk
  • 4.1 Lumped capacitance model
  • 4.2 Coupled multiconductor MIS microstrip line model
  • 4.3 Frequency-domain model analysis of single-level interconnections
  • 4.4 Transmission line analysis of parallel multilevel interconnections
  • 4.5 Compact expressions for crosstalk analysis
  • 5. Modeling of electromigration-induced interconnection failure
  • 5.1 Electromigration factors and mechanism
  • 5.2 Problems caused by electromigration
  • 5.3 Reduction of electromigration
  • 5.4 Measurement of electromigration
  • 5.5 Electromigration in the copper interconnections
  • 5.6 Models of integrated circuit reliability
  • 5.7 Modeling of electromigration due to current pulses
  • 5.8 Guidelines for testing electromigration
  • 6. Other interconnection technologies
  • 6.1 Optical interconnections
  • 6.2 Superconducting interconnections
  • 6.3 Nanotechnology circuit interconnections
  • Appendixes
  • A. Tables of constants
  • B. Method of images
  • C. Method of moments
  • D. Transmission line equations
  • E. Miller's theorem
  • F. Inverse Laplace transformation technique
  • Index.

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