Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces /

SiC materials and devices
Опубліковано: (2007)

Compound semiconductor bulk materials and characterizations
за авторством: Oda, O.
Опубліковано: (2007)

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers /
за авторством: Yazdanfar, Milan
Опубліковано: (2014)

CMOS RF modeling, characterization and applications
Опубліковано: (2002)

Compound semiconductor bulk materials and characterizations
за авторством: Oda, Osamu
Опубліковано: (2012)

Electron paramagnetic resonance studies of point defects in AlGaN and SiC /
за авторством: Trinh, Xuan Thang
Опубліковано: (2015)

Advances in semiconducting materials /
Опубліковано: (2009)

GaN-based materials and devices growth, fabrication, characterization and performance /
Опубліковано: (2004)

Electrical characterization of organic electronic materials and devices
за авторством: Stallinga, Peter, 1966-
Опубліковано: (2009)

An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications /
за авторством: Sharon, Maheshwar
Опубліковано: (2016)

An essential guide to electronic material surfaces and interfaces /
за авторством: Brillson, L. J.
Опубліковано: (2016)

Semiconductor materials an introduction to basic principles /
за авторством: Yacobi, B. G.
Опубліковано: (2003)

Advances in III-V semiconductor nanowires and nanodevices
Опубліковано: (2011)

Proceedings of the 13th Asian Conference on Solid State Ionics ionics for a sustainable world: Sendai Japan, 17-20 July 2012 /
Опубліковано: (2012)

Proceedings of the 10th Asian Conference on Solid State Ionics advanced materials for emerging technologies : Kandy, Sri Lanka, 12-16 June 2006 /
Опубліковано: (2006)

Functionalization of semiconductor surfaces
Опубліковано: (2012)

Device characterization and modeling of large-size GaN HEMTs
за авторством: Flores, Jaime Alberto Zamudio
Опубліковано: (2012)

Materials for high-temperature semiconductor devices
Опубліковано: (1995)

Silicon technologies ion implantation and thermal treatment /
Опубліковано: (2011)

Electrical overstress (EOS) devices, circuits and systems /
за авторством: Voldman, Steven H.
Опубліковано: (2014)

Handbook of distributed feedback laser diodes /
за авторством: Morthier, Geert, та інші
Опубліковано: (2013)

Fundamentals of silicon carbide technology : growth, characterization, devices and applications /
за авторством: Kimoto, Tsunenobu, 1963-, та інші
Опубліковано: (2014)

The physics and modeling of MOSFETS surface-potential model HiSIM /
за авторством: Miura-Mattausch, Mitiko, 1949-
Опубліковано: (2008)

Semiconductor electrochemistry /
за авторством: Memming, Rüdiger, 1931-
Опубліковано: (2015)

Transistors types, materials, and applications /
Опубліковано: (2010)

Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine /
Опубліковано: (2011)

MOCVD growth of GaN-based high electron mobility transistor structures /
за авторством: Chen, Jr-Tai
Опубліковано: (2015)

MOCVD growth of GaN-based high electron mobility transistor structures /
за авторством: Chen, Jr-Tai
Опубліковано: (2015)

Advances in silicon carbide processing and applications
Опубліковано: (2004)

III-nitride semiconductor materials /
Опубліковано: (2006)

Transient-induced latchup in CMOS integrated circuits
за авторством: Ker, Ming-Dou
Опубліковано: (2009)

Nitride semiconductor devices fundamentals and applications /
за авторством: Morkoç, Hadis
Опубліковано: (2013)

Transparent oxide electronics from materials to devices /
Опубліковано: (2012)

Geometric models for rolling-shutter and push-broom sensors /
за авторством: Ringaby, Erik
Опубліковано: (2014)

Handbook of wafer bonding
Опубліковано: (2012)

Compound semiconductor integrated circuits
Опубліковано: (2003)