Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces /

SiC materials and devices
Опубликовано: (2007)

Precursors and defect control for halogenated CVD of thick SiC epitaxial layers /
по: Yazdanfar, Milan
Опубликовано: (2014)

Compound semiconductor bulk materials and characterizations
по: Oda, O.
Опубликовано: (2007)

CMOS RF modeling, characterization and applications
Опубликовано: (2002)

Compound semiconductor bulk materials and characterizations
по: Oda, Osamu
Опубликовано: (2012)

Electron paramagnetic resonance studies of point defects in AlGaN and SiC /
по: Trinh, Xuan Thang
Опубликовано: (2015)

Advances in semiconducting materials /
Опубликовано: (2009)

GaN-based materials and devices growth, fabrication, characterization and performance /
Опубликовано: (2004)

Electrical characterization of organic electronic materials and devices
по: Stallinga, Peter, 1966-
Опубликовано: (2009)

An introduction to the physics and electrochemistry of semiconductors : fundamentals and applications /
по: Sharon, Maheshwar
Опубликовано: (2016)

An essential guide to electronic material surfaces and interfaces /
по: Brillson, L. J.
Опубликовано: (2016)

Advances in III-V semiconductor nanowires and nanodevices
Опубликовано: (2011)

Semiconductor materials an introduction to basic principles /
по: Yacobi, B. G.
Опубликовано: (2003)

Functionalization of semiconductor surfaces
Опубликовано: (2012)

Device characterization and modeling of large-size GaN HEMTs
по: Flores, Jaime Alberto Zamudio
Опубликовано: (2012)

Proceedings of the 10th Asian Conference on Solid State Ionics advanced materials for emerging technologies : Kandy, Sri Lanka, 12-16 June 2006 /
Опубликовано: (2006)

Proceedings of the 13th Asian Conference on Solid State Ionics ionics for a sustainable world: Sendai Japan, 17-20 July 2012 /
Опубликовано: (2012)

Fundamentals of silicon carbide technology : growth, characterization, devices and applications /
по: Kimoto, Tsunenobu, 1963-, и др.
Опубликовано: (2014)

Materials for high-temperature semiconductor devices
Опубликовано: (1995)

Electrical overstress (EOS) devices, circuits and systems /
по: Voldman, Steven H.
Опубликовано: (2014)

Silicon technologies ion implantation and thermal treatment /
Опубликовано: (2011)

Handbook of distributed feedback laser diodes /
по: Morthier, Geert, и др.
Опубликовано: (2013)

The physics and modeling of MOSFETS surface-potential model HiSIM /
по: Miura-Mattausch, Mitiko, 1949-
Опубликовано: (2008)

Semiconductor electrochemistry /
по: Memming, Rüdiger, 1931-
Опубликовано: (2015)

Transistors types, materials, and applications /
Опубликовано: (2010)

Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine /
Опубликовано: (2011)

MOCVD growth of GaN-based high electron mobility transistor structures /
по: Chen, Jr-Tai
Опубликовано: (2015)

MOCVD growth of GaN-based high electron mobility transistor structures /
по: Chen, Jr-Tai
Опубликовано: (2015)

III-nitride semiconductor materials /
Опубликовано: (2006)

Advances in silicon carbide processing and applications
Опубликовано: (2004)

Transparent oxide electronics from materials to devices /
Опубликовано: (2012)

Nitride semiconductor devices fundamentals and applications /
по: Morkoç, Hadis
Опубликовано: (2013)

Transient-induced latchup in CMOS integrated circuits
по: Ker, Ming-Dou
Опубликовано: (2009)

Geometric models for rolling-shutter and push-broom sensors /
по: Ringaby, Erik
Опубликовано: (2014)

Handbook of wafer bonding
Опубликовано: (2012)

Recent topics on modeling of semiconductor processes, devices, and circuits
по: Onur Topaloglu, Rasit
Опубликовано: (2011)