Electron paramagnetic resonance studies of point defects in AlGaN and SiC /

Defects and diffusion in semiconductors XIII /
Cyhoeddwyd: (2011)

Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011. Miyazaki, Japan /
Cyhoeddwyd: (2012)

SiC materials and devices
Cyhoeddwyd: (2007)

Radiation defect engineering
gan: Kozlovskiĭ, V. V. (Vitaliĭ Vasilʹevich)
Cyhoeddwyd: (2005)

Functionalization of semiconductor surfaces
Cyhoeddwyd: (2012)

On the perspectives of wide-band gap power devices in electronic-based power conversion for renewable systems
gan: Araujo, Samuel Vasconcelos
Cyhoeddwyd: (2013)

Semiconductor physics and devices : basic principles /
gan: Neamen, Donald A.
Cyhoeddwyd: (2003)

Semiconductor physics and devices : basic principles /
gan: Neamen, Donald A.
Cyhoeddwyd: (2003)

Semiconductor physics and devices : basic principles /
gan: Neamen, Donald A.
Cyhoeddwyd: (2012)

CVD solutions for new directions in SiC and GaN epitaxy /
gan: Li, Xun
Cyhoeddwyd: (2015)

Reliability and radiation effects in compound semiconductors
gan: Johnston, Allan
Cyhoeddwyd: (2010)

Semiconductor macroatoms basic physics and quantum-device applications /
Cyhoeddwyd: (2005)

Topics in high field transport in semiconductors
Cyhoeddwyd: (2001)

Advanced semiconductor heterostructures novel devices, potential device applications and basic properties /
Cyhoeddwyd: (2003)

Quantum dots research, technology and applications /
Cyhoeddwyd: (2008)

Properties of interacting low-dimensional systems
gan: Gumbs, Godfrey, 1948-
Cyhoeddwyd: (2011)

SiC materials and devices.
Cyhoeddwyd: (2006)

Semiconductor nanocrystal quantum dots synthesis, assembly, spectroscopy, and applications /
Cyhoeddwyd: (2008)

New organic semiconductors for applications in organic electronics
gan: Du, Chunyan
Cyhoeddwyd: (2010)

Diffusion in semiconductors, other than silicon : compilation /
Cyhoeddwyd: (2010)

Transient-induced latchup in CMOS integrated circuits
gan: Ker, Ming-Dou
Cyhoeddwyd: (2009)

GaN-based materials and devices growth, fabrication, characterization and performance /
Cyhoeddwyd: (2004)

Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces /
gan: Xia, Chao
Cyhoeddwyd: (2015)

Low-dimensional carriers under in-plane magnetic field novel phenomena /
gan: Simserides, Constantinos
Cyhoeddwyd: (2010)

MOCVD growth of GaN-based high electron mobility transistor structures /
gan: Chen, Jr-Tai
Cyhoeddwyd: (2015)

MOCVD growth of GaN-based high electron mobility transistor structures /
gan: Chen, Jr-Tai
Cyhoeddwyd: (2015)

Magnetism and superconductivity in low-dimensional systems utilization in future applications /
Cyhoeddwyd: (2008)

Molecular beam epitaxy from research to mass production /
Cyhoeddwyd: (2012)

Physical properties of the low-dimensional A[superscript]3B[superscript]6 and A[superscript]3B[superscript]3C[superscript]6[subscript]2 compounds
gan: Panich, Alexander M.
Cyhoeddwyd: (2010)

Point defect energies /
Cyhoeddwyd: (2015)

Epioptics-11 proceedings of the 49th course of the International School of Solid State Physics : Erice, Italy, 19-26 July 2010 /
Cyhoeddwyd: (2012)

Stanford R. Ovshinsky the science and technology of an American genius /
gan: Ovshinsky, Stanford R.
Cyhoeddwyd: (2008)

Epioptics-8 proceedings of the 33rd course of the International School of Solid State Physics : Erice, Italy, 20-26 July 2004 /
Cyhoeddwyd: (2006)

Epioptics-9 proceedings of the 39th course of the International School of Solid State Physics : Erice, Italy, 20-26 July 2006 /
Cyhoeddwyd: (2008)

Epioptics-7 proceedings of the 24th course of the International School of Solid State Physics : Erice, Italy, 20-26 July 2002 /
Cyhoeddwyd: (2004)

Epioptics-10 proceedings of the 43rd course of the International School of Solid State Physics, Erice, Italy, 19-26 July 2008 /
Cyhoeddwyd: (2010)