Nonlinear transistor model parameter extraction techniques

में बचाया:

ग्रंथसूची विवरण
निगमित लेखक:	ebrary, Inc
अन्य लेखक:	Fager, Christian, Root, David E., Rudolph, Matthias, 1969-
स्वरूप:	इलेक्ट्रोनिक ई-पुस्तक
भाषा:	अंग्रेज़ी
प्रकाशित:	Cambridge ; New York : Cambridge University Press, c2012.
श्रृंखला:	Cambridge RF and microwave engineering series.
विषय:	Transistors > Mathematical models. Electronic circuit design. Electronic books.
ऑनलाइन पहुंच:	An electronic book accessible through the World Wide Web; click to view
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समान संसाधन: Nonlinear transistor model parameter extraction techniques

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The physics and modeling of MOSFETS surface-potential model HiSIM /
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Organic light-emitting transistors : towards the next generation display technology /
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Silicon RF power MOSFETS
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SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors /
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ESD design and synthesis /
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Transparent oxide electronics from materials to devices /
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ESD : analog circuits and design /
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Compound semiconductor integrated circuits
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Fundamentals of silicon carbide technology : growth, characterization, devices and applications /
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Structured electronic design negative-feedback amplifiers /
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Compact models for integrated circuit design : conventional transistors and beyond /
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Integrated circuits, photodiodes and organic field effect transistors
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LED packaging for lighting applications design, manufacturing, and testing /
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MOCVD growth of GaN-based high electron mobility transistor structures /
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MOCVD growth of GaN-based high electron mobility transistor structures /
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Intuitive analog circuit design /
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