Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine /
Сохранить в:
| Соавтор: | |
|---|---|
| Другие авторы: | , |
| Формат: | Электронный ресурс Материалы конференции eКнига |
| Язык: | английский |
| Опубликовано: |
Durnten-Zurich, Switzerland :
Trans Tech Publications,
[2011]
|
| Серии: | Advanced materials research ;
276. |
| Предметы: | |
| Online-ссылка: | An electronic book accessible through the World Wide Web; click to view |
| Метки: |
Добавить метку
Нет меток, Требуется 1-ая метка записи!
|
Схожие документы
Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine /
Опубликовано: (2011)
Опубликовано: (2011)
Semiconductor strain metrology principles and applications /
по: Wong, Terence K. S.
Опубликовано: (2012)
по: Wong, Terence K. S.
Опубликовано: (2012)
Semiconductor strain metrology principles and applications /
по: Wong, Terence K. S.
Опубликовано: (2012)
по: Wong, Terence K. S.
Опубликовано: (2012)
SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors /
по: Omura, Y. (Yasuhisa)
Опубликовано: (2013)
по: Omura, Y. (Yasuhisa)
Опубликовано: (2013)
SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors /
по: Omura, Y. (Yasuhisa)
Опубликовано: (2013)
по: Omura, Y. (Yasuhisa)
Опубликовано: (2013)
SiC materials and devices.
Опубликовано: (2006)
Опубликовано: (2006)
SiC materials and devices.
Опубликовано: (2006)
Опубликовано: (2006)
Silicon science and advanced micro-device engineering II selected, peer reviewed papers from the 6th International Symposium on Silicon Science and 2nd International Conference on Advanced Micro-Device Engineering (ISSS&AMDE 2010), December 9-10, 2010, Kiryu City Performing Arts Center, Kiryu, Japan /
Опубликовано: (2012)
Опубликовано: (2012)
Silicon science and advanced micro-device engineering II selected, peer reviewed papers from the 6th International Symposium on Silicon Science and 2nd International Conference on Advanced Micro-Device Engineering (ISSS&AMDE 2010), December 9-10, 2010, Kiryu City Performing Arts Center, Kiryu, Japan /
Опубликовано: (2012)
Опубликовано: (2012)
Silicon science and advanced micro-device engineering I selected, peer reviewed papers from the 5th International Symposium on Silicon Science and the 1st International Conference on Advanced Micro-Device Engineering (ISSS & AMDE 2009), was held by the International Education and Research Center for Silicon Science and the Advanced Technology Research Center (ATEC), Gunma University on 10 and 11 December 2009 in Kiryu, Japan /
Опубликовано: (2011)
Опубликовано: (2011)
Silicon science and advanced micro-device engineering I selected, peer reviewed papers from the 5th International Symposium on Silicon Science and the 1st International Conference on Advanced Micro-Device Engineering (ISSS & AMDE 2009), was held by the International Education and Research Center for Silicon Science and the Advanced Technology Research Center (ATEC), Gunma University on 10 and 11 December 2009 in Kiryu, Japan /
Опубликовано: (2011)
Опубликовано: (2011)
Silicon carbide power devices
по: Baliga, B. Jayant, 1948-
Опубликовано: (2005)
по: Baliga, B. Jayant, 1948-
Опубликовано: (2005)
Silicon carbide power devices
по: Baliga, B. Jayant, 1948-
Опубликовано: (2005)
по: Baliga, B. Jayant, 1948-
Опубликовано: (2005)
Materials for high-temperature semiconductor devices
Опубликовано: (1995)
Опубликовано: (1995)
Materials for high-temperature semiconductor devices
Опубликовано: (1995)
Опубликовано: (1995)
Insulators types, properties and uses /
Опубликовано: (2011)
Опубликовано: (2011)
Insulators types, properties and uses /
Опубликовано: (2011)
Опубликовано: (2011)
Breakdown phenomena in semiconductors and semiconductor devices
по: Levinshteĭn, M. E. (Mikhail Efimovich)
Опубликовано: (2005)
по: Levinshteĭn, M. E. (Mikhail Efimovich)
Опубликовано: (2005)
Breakdown phenomena in semiconductors and semiconductor devices
по: Levinshteĭn, M. E. (Mikhail Efimovich)
Опубликовано: (2005)
по: Levinshteĭn, M. E. (Mikhail Efimovich)
Опубликовано: (2005)
Fundamentals of silicon carbide technology : growth, characterization, devices and applications /
по: Kimoto, Tsunenobu, 1963-, и др.
Опубликовано: (2014)
по: Kimoto, Tsunenobu, 1963-, и др.
Опубликовано: (2014)
Fundamentals of silicon carbide technology : growth, characterization, devices and applications /
по: Kimoto, Tsunenobu, 1963-, и др.
Опубликовано: (2014)
по: Kimoto, Tsunenobu, 1963-, и др.
Опубликовано: (2014)
Nitride semiconductor devices fundamentals and applications /
по: Morkoç, Hadis
Опубликовано: (2013)
по: Morkoç, Hadis
Опубликовано: (2013)
Nitride semiconductor devices fundamentals and applications /
по: Morkoç, Hadis
Опубликовано: (2013)
по: Morkoç, Hadis
Опубликовано: (2013)
Advances in silicon carbide processing and applications
Опубликовано: (2004)
Опубликовано: (2004)
Advances in silicon carbide processing and applications
Опубликовано: (2004)
Опубликовано: (2004)
Mikrohohlkugelgefulltes Silikongel als Isolierstoff in der Hochspannungstechnik
по: Belz, Oliver
Опубликовано: (2011)
по: Belz, Oliver
Опубликовано: (2011)
Mikrohohlkugelgefulltes Silikongel als Isolierstoff in der Hochspannungstechnik
по: Belz, Oliver
Опубликовано: (2011)
по: Belz, Oliver
Опубликовано: (2011)
HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France /
Опубликовано: (2012)
Опубликовано: (2012)
HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France /
Опубликовано: (2012)
Опубликовано: (2012)
Advances in semiconducting materials /
Опубликовано: (2009)
Опубликовано: (2009)
Advances in semiconducting materials /
Опубликовано: (2009)
Опубликовано: (2009)
NEMS/MEMS technology and devices : selected, peer reviewed papers from the International conference on materials for advanced technologies (ICMAT 2011), Symposium G: June 26 - July 1, 2011, Suntec, Singapore /
Опубликовано: (2011)
Опубликовано: (2011)
NEMS/MEMS technology and devices : selected, peer reviewed papers from the International conference on materials for advanced technologies (ICMAT 2011), Symposium G: June 26 - July 1, 2011, Suntec, Singapore /
Опубликовано: (2011)
Опубликовано: (2011)
Semiconductor materials an introduction to basic principles /
по: Yacobi, B. G.
Опубликовано: (2003)
по: Yacobi, B. G.
Опубликовано: (2003)
Semiconductor materials an introduction to basic principles /
по: Yacobi, B. G.
Опубликовано: (2003)
по: Yacobi, B. G.
Опубликовано: (2003)
Compound semiconductor bulk materials and characterizations
по: Oda, O.
Опубликовано: (2007)
по: Oda, O.
Опубликовано: (2007)
Compound semiconductor bulk materials and characterizations
по: Oda, O.
Опубликовано: (2007)
по: Oda, O.
Опубликовано: (2007)
Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces /
по: Xia, Chao
Опубликовано: (2015)
по: Xia, Chao
Опубликовано: (2015)
Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces /
по: Xia, Chao
Опубликовано: (2015)
по: Xia, Chao
Опубликовано: (2015)
Proceedings of the 10th Asian Conference on Solid State Ionics advanced materials for emerging technologies : Kandy, Sri Lanka, 12-16 June 2006 /
Опубликовано: (2006)
Опубликовано: (2006)