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Transient-induced latchup in CMOS integrated circuits

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Xehetasun bibliografikoak
Egile nagusia:	Ker, Ming-Dou
Erakunde egilea:	ebrary, Inc
Beste egile batzuk:	Hsu, Sheng-Fu
Formatua:	Baliabide elektronikoa eBook
Hizkuntza:	ingelesa
Argitaratua:	Singapore ; Hoboken, NJ : Wiley, c2009.
Gaiak:	Metal oxide semiconductors, Complementary > Defects. Metal oxide semiconductors, Complementary > Reliability. Electronic books.
Sarrera elektronikoa:	An electronic book accessible through the World Wide Web; click to view
Etiketak:	Etiketa erantsi Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!

Antzeko izenburuak

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Frontiers in electronics
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Strain-engineered MOSFETs /
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Silicon RF power MOSFETS
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Design and analysis of integrator-based log-domain filter circuits
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MOSFET modeling for circuit analysis and design
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Technology evolution for silicon nano-electronics selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electronics 2010, June 3-5, 2010, Tokyo Institute of Technology, Tokyo, Japan /
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Transparent oxide electronics from materials to devices /
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Frontiers of 4D- and 5D-transition metal oxides
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Design of multi-bit delta-sigma A/D converters
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Functional metal oxides : new science and novel applications /
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Nonlinearity of colloid systems : oxyhydrate systems /
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Defects and diffusion, theory and simulation : an annual retrospective I /
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Defects and diffusion in semiconductors. an annual retrospective /
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Defects and diffusion in semiconductors.
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