Search Results - semiconductors

Doping in conjugated polymers by Kar, Pradip

Subjects: An electronic book accessible through the World Wide Web; click to view

Securing the future regional and national programs to support the semiconductor industry /

Subjects: “…Semiconductor industry Government policy United States.…”
An electronic book accessible through the World Wide Web; click to view

Technology evolution for silicon nano-electronics selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electr...

Table of Contents: “…High Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory -- Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors -- Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator -- Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering -- Resistive Memory Utilizing Ferritin Protein with Nano Particle -- Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation -- Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction -- Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface -- Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process -- Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation -- Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction -- Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures -- Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application -- Strained Ge and Ge1-xSnx Technology for Future CMOS Devices -- Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100) -- Structural Change during the Formation of Directly Bonded Silicon Substrates -- Microscopic Structure of Directly Bonded Silicon Substrates -- Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains -- Si Nanodot Device Fabricated by Thermal Oxidation and their Applications -- Influences of Carrier Transport on Drain-Current Variability of MOSFETs -- Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers -- Analysis of Threshold Voltage Variations in Fin Field Effect Transistors -- Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs -- Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction -- Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs -- Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors -- Interconnect Design Challenges in Nano CMOS Circuit.…”
An electronic book accessible through the World Wide Web; click to view

Physical properties of the low-dimensional A[superscript]3B[superscript]6 and A[superscript]3B[superscript]3C[superscript]6[subscript]2 compounds by Panich, Alexander M.

Subjects: “…Low-dimensional semiconductors.…”
An electronic book accessible through the World Wide Web; click to view

HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France /

Subjects: “…Semiconductors Materials Congresses.…”
An electronic book accessible through the World Wide Web; click to view

HeteroSiC & WASMPE 2013 : selected, peer reviewed paper from the 2013 HeteroSiC-WASMPE, June 17-19, 2013, Nice, France /

Subjects: “…Semiconductors Materials Congresses.…”
An electronic book accessible through the World Wide Web; click to view

Technology evolution for silicon nano-electronics selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electr...

Table of Contents: “…High Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory -- Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors -- Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator -- Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering -- Resistive Memory Utilizing Ferritin Protein with Nano Particle -- Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation -- Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction -- Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface -- Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process -- Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation -- Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction -- Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures -- Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application -- Strained Ge and Ge1-xSnx Technology for Future CMOS Devices -- Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100) -- Structural Change during the Formation of Directly Bonded Silicon Substrates -- Microscopic Structure of Directly Bonded Silicon Substrates -- Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains -- Si Nanodot Device Fabricated by Thermal Oxidation and their Applications -- Influences of Carrier Transport on Drain-Current Variability of MOSFETs -- Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers -- Analysis of Threshold Voltage Variations in Fin Field Effect Transistors -- Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs -- Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction -- Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs -- Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors -- Interconnect Design Challenges in Nano CMOS Circuit.…”
An electronic book accessible through the World Wide Web; click to view

Physical properties of the low-dimensional A[superscript]3B[superscript]6 and A[superscript]3B[superscript]3C[superscript]6[subscript]2 compounds by Panich, Alexander M.

Subjects: “…Low-dimensional semiconductors.…”
An electronic book accessible through the World Wide Web; click to view

HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France /

Subjects: “…Semiconductors Materials Congresses.…”
An electronic book accessible through the World Wide Web; click to view

HeteroSiC & WASMPE 2013 : selected, peer reviewed paper from the 2013 HeteroSiC-WASMPE, June 17-19, 2013, Nice, France /

Subjects: “…Semiconductors Materials Congresses.…”
An electronic book accessible through the World Wide Web; click to view

An essential guide to electronic material surfaces and interfaces / by Brillson, L. J.

Table of Contents: “…Why surfaces and interfaces of electronic materials -- Semiconductor electronic and optical properties -- Electrical measurements of surfaces and interfaces -- Localized states at surfaces and interfaces -- Ultrahigh vacuum technology -- Surface and interface analysis -- Surface and interface spectroscopies -- Dynamical depth-dependent analysis and imaging -- Electron beam diffraction and microscopy of atomic-scale geometrical structure -- Scanning probe techniques -- Optical spectroscopies -- Electronic material surfaces -- Surface electronic applications -- Semiconductor heterojunctions -- Metal-semiconductor interfaces -- Next generation surfaces and interfaces.…”
An electronic book accessible through the World Wide Web; click to view

Future trends in microelectronics : Journey into the unknown /

Subjects: An electronic book accessible through the World Wide Web; click to view

An essential guide to electronic material surfaces and interfaces / by Brillson, L. J.

Table of Contents: “…Why surfaces and interfaces of electronic materials -- Semiconductor electronic and optical properties -- Electrical measurements of surfaces and interfaces -- Localized states at surfaces and interfaces -- Ultrahigh vacuum technology -- Surface and interface analysis -- Surface and interface spectroscopies -- Dynamical depth-dependent analysis and imaging -- Electron beam diffraction and microscopy of atomic-scale geometrical structure -- Scanning probe techniques -- Optical spectroscopies -- Electronic material surfaces -- Surface electronic applications -- Semiconductor heterojunctions -- Metal-semiconductor interfaces -- Next generation surfaces and interfaces.…”
An electronic book accessible through the World Wide Web; click to view

Future trends in microelectronics : Journey into the unknown /

Subjects: An electronic book accessible through the World Wide Web; click to view

Passivation of metals and semiconductors, and properties of thin oxide layers a selection of papers from the 9th International Symposium, Paris, France, 27 June-1 July 2005 /

Subjects: An electronic book accessible through the World Wide Web; click to view

Passivation of metals and semiconductors, and properties of thin oxide layers a selection of papers from the 9th International Symposium, Paris, France, 27 June-1 July 2005 /

Subjects: An electronic book accessible through the World Wide Web; click to view

Demystifying switching power supplies by Mack, Raymond A.

Subjects: An electronic book accessible through the World Wide Web; click to view

Demystifying switching power supplies by Mack, Raymond A.

Subjects: An electronic book accessible through the World Wide Web; click to view

Vertical 3D memory technologies / by Prince, Betty

Subjects: An electronic book accessible through the World Wide Web; click to view

Vertical 3D memory technologies / by Prince, Betty

Subjects: An electronic book accessible through the World Wide Web; click to view