Search Results - quantum channel

Technology evolution for silicon nano-electronics selected, peer reviewed papers from the proceedings of the International Symposium on Technology Evolution for Silicon Nano-Electr...

Table of Contents: “…High Mobility Ge-Based CMOS Device Technologies -- SiGe-Mixing-Triggered Rapid-Melting-Growth of High-Mobility Ge-On-Insulator -- Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Devices -- Functional Device Applications of Nanosilicon -- Tunable Single-Electron Turnstile Using Discrete Dopants in Nanoscale SOI-FETs -- KFM Observation of Electron Charging and Discharging in Phosphorus-Doped SOI Channel -- Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures -- Investigation about I-V Characteristics in a New Electronic Structure Model of the Ohmic Contact for Future Nano-Scale Ohmic Contact -- Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure -- Electronic Structure and Spin-Injection of Co-Based Heusler Alloy/ Semiconductor Junctions -- First-Principles Calculations of the Dielectric Constant for the GeO2 Films -- Nanosize Electronics Material Analysis by Local Quantities Based on the Rigged QED Theory -- Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors -- Effect of Al2O3 Deposition and Subsequent Annealing on Passivation of Defects in Ge-Rich SiGe-on-Insulator -- Controlled Synthesis of Carbon Nanowalls for Carbon Channel Engineering -- Resistive Memory Utilizing Ferritin Protein with Nano Particle -- Atomically Controlled Plasma Processing for Group IV Quantum Heterostructure Formation -- Nanometer-Scale Characterization Technique for Si Nanoelectric Materials Using Synchrotron Radiation Microdiffraction -- Generation and Growth of Atomic-Scale Roughness at Surface and Interface of Silicon Dioxide Thermally Grown on Atomically Flat Si Surface -- Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process -- Evaluation of Strained Silicon by Electron Back Scattering Pattern Compared with Raman Measurement and Edge Force Model Calculation -- Development of New Methods for Fine-Wiring in Si Using a Wet Catalytic Reaction -- Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures -- Energy Band Engineering of Metal Nanodots for High Performance Nonvolatile Memory Application -- Strained Ge and Ge1-xSnx Technology for Future CMOS Devices -- Improved Electrical Properties and Thermal Stability of GeON Gate Dielectrics Formed by Plasma Nitridation of Ultrathin Oxides on Ge(100) -- Structural Change during the Formation of Directly Bonded Silicon Substrates -- Microscopic Structure of Directly Bonded Silicon Substrates -- Formation of Nanotubes of Carbon by Joule Heating of Carbon-Contaminated Si Nanochains -- Si Nanodot Device Fabricated by Thermal Oxidation and their Applications -- Influences of Carrier Transport on Drain-Current Variability of MOSFETs -- Resistive Switching in NiO Bilayer Films with Different Crystallinity Layers -- Analysis of Threshold Voltage Variations in Fin Field Effect Transistors -- Capture/Emission Processes of Carriers in Heterointerface Traps Observed in the Transient Charge-Pumping Characteristics of SiGe/Si-Hetero-Channel pMOSFETs -- Quasi-Ballistic Transport in Nano-Scale Devices: Boundary Layer, Potential Fluctuation, and Coulomb Interaction -- Effect of Back Bias on Variability in Intrinsic Channel SOI MOSFETs -- Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors -- Interconnect Design Challenges in Nano CMOS Circuit.…”
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Graphene nanostructures : modeling, simulation, and applications in electronics and photonics / by Banadaki, Yaser M., Sharifi, Safura

Table of Contents: “…Computational Carrier Transport Model of GNRFET; 3.1 Introduction; 3.2 Quantum Transport Model; 3.3 Quantum Capacitance in GNRFET; 3.4 Computational Time; 3.5 Summary; 4. …”
Taylor & Francis
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Advances in Optoelectronic Technology and Industry Development Proceedings of the 12th International Symposium on Photonics and Optoelectronics (SOPO 2019), August 17-19, 2019, Xi'...

Table of Contents: “…Mode competition and cavity tuning characteristics of a new integrated orthogonal polarized He-Ne laser with Y-shaped cavityEffects of pressure on the femtosecond filamentation with HOKE in air; Optical Communications; Performance investigation of 16/32-channel DWDM PON and long-reach PON systems using an ASE noise source; A comparative selection of the low-loss optical fibers designed for FTTH networks; Enhancement of fidelity of quantum teleportation in a non-Markovian environment; A 2?…”
Taylor & Francis
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Guide to state-of-the-art electron devices

Table of Contents: “…Machine generated contents note: Foreword Preface Contributors and Acknowledgements Historic Timeline Part I - Basic Electron Devices 1 Bipolar Transistors 1.1 Motivation 1.2 The pn Junction and Its Electronic Applications 1.3 The Bipolar Junction Transistor and Its Electronic Applications 1.4 Optimization of Bipolar Transistors 1.5 SiGe Heterojunction Bipolar Transistors References 2 MOS Devices 2.1 Introduction 2.2 MOSFET Basics 2.3 The Evolution of MOSFET 2.4 Concluding Remarks References 3 Memory Devices 3.1 Introduction 3.2 Volatile Memories 3.3 Non-Volatile Memories 3.4 Future Perspectives of MOS Memories 3.5 Closing Remarks References 4 Passive Components 4.1 Discrete and integrated passive components 4.2 Application in Analog ICs and DRAM 4.3 The planar Spiral Inductor - A Case Study 4.4 Parasitics in Integrated Circuits References 5 Emerging Research Devices 5.1 Non-Charge Based Switching 5.2 Carbon as a Replacement for Silicon and the Rise of Moletronics 5.3 Conclusions References Part II - Aspects of Device and IC Manufacturing 6 Electronics Materials 6.1 Introduction 6.2 Silicon Device Technology 6.3 Compound Semiconductor Devices 6.4 Electronic Displays 6.5 Conclusions References 7 Compact Modeling 7.1 The Role of Compact Models 7.2 Bipolar Transistor Compact Modeling 7.3 MOS Transistor Compact Modeling 7.4 Compact Modeling of Passive Components 7.5 Benchmarking and Implementation References 8 Technology Computer Aided Design 8.1 Introduction 8.2 Drift-Diffusion Model 8.3 Microscopic Transport Models 8.4 Quantum Transport Models 8.5 Process and Equipment Simulation References 9 Device Reliability Physics 9.1 Introduction and Background 9.2 Device Reliability Issues 9.3 Interconnect Degradation Mechanisms 9.4 Circuit-Level Reliability Issues 9.5 Microscopic Approaches to Assuring Reliability of ICs References 10 Semiconductor Manufacturing 10.1 Introduction 10.2 Substrates 10.3 Lithography and Etching 10.4 Front-End Processing 10.5 Back-End Processing 10.6 Process Control 10.7 Assembly and Test 10.8 Future Directions References Part III - Applications based on Electron Devices 11 VLSI Logic Technology and Circuits 11.1 Introduction 11.2 MOSFET Scaling Trends 11.3 Low-Power and High-Speed Logic Design 11.4 Scaling-Driven technology Enhancements 11.5 Ultra-Low Voltage Transistors 11.6 Interconnects 11.7 Memory Design 11.8 System Integration References 12 VLSI Mixed-Signal Technology And Circuits 12.1 Introduction 12.2 Analog/Mixed-Signal Technologies in Scaled CMOS 12.3 Data Converter ICs 12.4 Mixed-Signal Circuits in Low-Power Display Applications 12.5 Image Sensor Technology and Circuits References 13 Memory Technologies 13.1 Semiconductor Memory History 13.2 State of Mainstream Semiconductor Memory Today 13.3 Emerging Memory Technologies 13.4 Conclusions References 14 RF&Microwave Semiconductor Technologies 14.1 III-V Based: GaAs and InP 14.2 Si and SiGe 14.3 Wide Bandgap Devices (Group III-Nitrides, SiC and Diamond) References 15 Power Devices and ICs 15.1 Overview of Power Devices & ICs 15.2 Two-Carrier and High-Power Devices 15.3 Power MOSFET Devices 15.4 High-Voltage and Power ICs 15.5 Wide Bandgap Power Devices References 16 Photovoltaic Device Applications 16.1 Introduction 16.2 Silicon Photovoltaics 16.3 Polycrystalline Thin-Film Photovoltaics 16.4 III-V Compound Photovoltaics 16.5 Future Concepts in Photovoltaics References 17 Large Area Electronics 17.1 Thin-Film Solar Cells 17.2 Large-Area Imaging 17.3 Flat-Panel Displays References 18 Microelectromechanical Systems (MEMS) 18.1 Introduction 18.2 The 1960's - First Micromachined Structures Envisioned 18.3 The 1970's - Integrated Sensors Started 18.4 The 1980's - Surface Micromachining Emerged 18.5 The 1990's - MEMS Impacted Various Fields 18.6 The 2000's - Diversified Sophisticated Systems Enabled By MEMS 18.7 Future Outlook References 19 Vacuum Device Applications 19.1 Traveling-Wave Devices 19.2 Klystrons 19.3 Inductive Output Tubes 19.4 Crossed-Field Devices 19.5 Gyro-Devices References 20 Optoelectronic Device Applications 20.1 Introduction 20.2 Light Emission in Semiconductors 20.3 Photodetectors 20.4 Integrated Optoelectronics 20.5 Optical Interconnects 20.6 Concluding Remarks References 21 Devices for the Post Silicon CMOS Era 21.1 Introduction 21.2 Devices for the 8-nm Node With Conventional Materials 21.3 New Channel Materials and Devices 21.4 Concluding Remarks References Index.…”
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