rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: MOCVD growth of GaN-based high electron mobility transistor structures
  name:
    name part: Chen, Jr-Tai
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: Semiconductor Materials Division
    name part: Department of Physics, Chemistry, and Biology.
    name part: Linkoping University,
    role:
      role term: issuing body.
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: sw
    date issued: 2015
    copyright date: 2015
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (81 pages) : illustrations (some color).
  note: Jr-Tai Chen.
  note: Includes bibliographical references.
  subject:
    topic: Semiconductors
    topic: Materials
  subject:
    topic: Epitaxy
  classification: TK7871.85 .C446 2015
  classification: 621.38152
  related item:
    title info:
      title: Linkoping studies in science and technology. Number 1662
      part name: Dissertations
  identifier: 9789175190730
  identifier: http://ebookcentral.proquest.com/lib/daystar-ebooks/detail.action
  record info:
    record content source: MiAaPQ
    record creation date: 150506
    record change date: 20250214125530.0
    record identifier: EBC3328196
    language of cataloging:
      language term: eng