High-k gate dielectrics for CMOS technology

High-k gate dielectrics for CMOS technology

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Bibliographic Details
Corporate Author: ebrary, Inc
Other Authors: He, Gang, Sun, Zhaoqi
Format: Electronic eBook
Language:English
Published: Weinheim : Wiley-VCH, 2012.
Subjects:
Dielectrics.
Metal oxide semiconductors, Complementary.
Electronic books.
Online Access:An electronic book accessible through the World Wide Web; click to view
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MARC

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020 |z 9783527330324 
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035 |a (CaPaEBR)ebr10653595 
035 |a (OCoLC)798536325 
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050 1 4 |a QC585  |b .H54 2012eb 
082 0 4 |a 538.24  |2 23 
245 0 0 |a High-k gate dielectrics for CMOS technology  |h [electronic resource] /  |c edited by Gang He and Zhaoqi Sun. 
260 |a Weinheim :  |b Wiley-VCH,  |c 2012. 
300 |a xxxi, 558 p. :  |b ill. (some col.) 
504 |a Includes bibliographical references and index. 
505 0 |a pt. 1. Scaling and challenging of Si-based CMOS -- pt. 2. High-k deposition and materials characterization -- pt. 3. Challenge in interface engineering and electrode -- pt. 4. Development in non-Si-based CMOS technology -- pt. 5. High-k Application in novel devices -- pt. 6. Challenge and directions. 
533 |a Electronic reproduction.  |b Palo Alto, Calif. :  |c ebrary,  |d 2013.  |n Available via World Wide Web.  |n Access may be limited to ebrary affiliated libraries. 
650 0 |a Dielectrics. 
650 0 |a Metal oxide semiconductors, Complementary. 
655 7 |a Electronic books.  |2 local 
700 1 |a He, Gang. 
700 1 |a Sun, Zhaoqi. 
710 2 |a ebrary, Inc. 
856 4 0 |u http://site.ebrary.com/lib/daystar/Doc?id=10653595  |z An electronic book accessible through the World Wide Web; click to view 
908 |a 170314 
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999 |c 151941  |d 151941 

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