Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine /
Wedi'i Gadw mewn:
Awdur Corfforaethol: | International Workshop on Semiconductor-on-Insulator Materials and Devices Kiev, Ukraine |
---|---|
Awduron Eraill: | Nazarov, A. N. (Alexei N.), Raskin, J.-P. (Jean-Pierre), 1971- |
Fformat: | Electronig Trafodyn Cynhadledd eLyfr |
Iaith: | Saesneg |
Cyhoeddwyd: |
Durnten-Zurich, Switzerland :
Trans Tech Publications,
[2011]
|
Cyfres: | Advanced materials research ;
276. |
Pynciau: | |
Mynediad Ar-lein: | An electronic book accessible through the World Wide Web; click to view |
Tagiau: |
Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|
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Breakdown phenomena in semiconductors and semiconductor devices
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Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces /
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Frontiers in electronics
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Eitemau Tebyg
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Cyhoeddwyd: (2012) -
SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors /
gan: Omura, Y. (Yasuhisa)
Cyhoeddwyd: (2013) -
SiC materials and devices.
Cyhoeddwyd: (2006) -
Silicon science and advanced micro-device engineering II selected, peer reviewed papers from the 6th International Symposium on Silicon Science and 2nd International Conference on Advanced Micro-Device Engineering (ISSS&AMDE 2010), December 9-10, 2010, Kiryu City Performing Arts Center, Kiryu, Japan /
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