Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine /
Uloženo v:
| Korporativní autor: | International Workshop on Semiconductor-on-Insulator Materials and Devices Kiev, Ukraine |
|---|---|
| Další autoři: | Nazarov, A. N. (Alexei N.), Raskin, J.-P. (Jean-Pierre), 1971- |
| Médium: | Elektronický zdroj Konferenční příspěvek E-kniha |
| Jazyk: | angličtina |
| Vydáno: |
Durnten-Zurich, Switzerland :
Trans Tech Publications,
[2011]
|
| Edice: | Advanced materials research ;
276. |
| Témata: | |
| On-line přístup: | An electronic book accessible through the World Wide Web; click to view |
| Tagy: |
Přidat tag
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
|
Podobné jednotky
Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine /
Vydáno: (2011)
Vydáno: (2011)
Semiconductor strain metrology principles and applications /
Autor: Wong, Terence K. S.
Vydáno: (2012)
Autor: Wong, Terence K. S.
Vydáno: (2012)
Semiconductor strain metrology principles and applications /
Autor: Wong, Terence K. S.
Vydáno: (2012)
Autor: Wong, Terence K. S.
Vydáno: (2012)
SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors /
Autor: Omura, Y. (Yasuhisa)
Vydáno: (2013)
Autor: Omura, Y. (Yasuhisa)
Vydáno: (2013)
SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors /
Autor: Omura, Y. (Yasuhisa)
Vydáno: (2013)
Autor: Omura, Y. (Yasuhisa)
Vydáno: (2013)
SiC materials and devices.
Vydáno: (2006)
Vydáno: (2006)
SiC materials and devices.
Vydáno: (2006)
Vydáno: (2006)
Silicon science and advanced micro-device engineering II selected, peer reviewed papers from the 6th International Symposium on Silicon Science and 2nd International Conference on Advanced Micro-Device Engineering (ISSS&AMDE 2010), December 9-10, 2010, Kiryu City Performing Arts Center, Kiryu, Japan /
Vydáno: (2012)
Vydáno: (2012)
Silicon science and advanced micro-device engineering II selected, peer reviewed papers from the 6th International Symposium on Silicon Science and 2nd International Conference on Advanced Micro-Device Engineering (ISSS&AMDE 2010), December 9-10, 2010, Kiryu City Performing Arts Center, Kiryu, Japan /
Vydáno: (2012)
Vydáno: (2012)
Silicon science and advanced micro-device engineering I selected, peer reviewed papers from the 5th International Symposium on Silicon Science and the 1st International Conference on Advanced Micro-Device Engineering (ISSS & AMDE 2009), was held by the International Education and Research Center for Silicon Science and the Advanced Technology Research Center (ATEC), Gunma University on 10 and 11 December 2009 in Kiryu, Japan /
Vydáno: (2011)
Vydáno: (2011)
Silicon science and advanced micro-device engineering I selected, peer reviewed papers from the 5th International Symposium on Silicon Science and the 1st International Conference on Advanced Micro-Device Engineering (ISSS & AMDE 2009), was held by the International Education and Research Center for Silicon Science and the Advanced Technology Research Center (ATEC), Gunma University on 10 and 11 December 2009 in Kiryu, Japan /
Vydáno: (2011)
Vydáno: (2011)
Silicon carbide power devices
Autor: Baliga, B. Jayant, 1948-
Vydáno: (2005)
Autor: Baliga, B. Jayant, 1948-
Vydáno: (2005)
Silicon carbide power devices
Autor: Baliga, B. Jayant, 1948-
Vydáno: (2005)
Autor: Baliga, B. Jayant, 1948-
Vydáno: (2005)
Materials for high-temperature semiconductor devices
Vydáno: (1995)
Vydáno: (1995)
Materials for high-temperature semiconductor devices
Vydáno: (1995)
Vydáno: (1995)
Insulators types, properties and uses /
Vydáno: (2011)
Vydáno: (2011)
Insulators types, properties and uses /
Vydáno: (2011)
Vydáno: (2011)
Breakdown phenomena in semiconductors and semiconductor devices
Autor: Levinshteĭn, M. E. (Mikhail Efimovich)
Vydáno: (2005)
Autor: Levinshteĭn, M. E. (Mikhail Efimovich)
Vydáno: (2005)
Breakdown phenomena in semiconductors and semiconductor devices
Autor: Levinshteĭn, M. E. (Mikhail Efimovich)
Vydáno: (2005)
Autor: Levinshteĭn, M. E. (Mikhail Efimovich)
Vydáno: (2005)
Fundamentals of silicon carbide technology : growth, characterization, devices and applications /
Autor: Kimoto, Tsunenobu, 1963-, a další
Vydáno: (2014)
Autor: Kimoto, Tsunenobu, 1963-, a další
Vydáno: (2014)
Fundamentals of silicon carbide technology : growth, characterization, devices and applications /
Autor: Kimoto, Tsunenobu, 1963-, a další
Vydáno: (2014)
Autor: Kimoto, Tsunenobu, 1963-, a další
Vydáno: (2014)
Nitride semiconductor devices fundamentals and applications /
Autor: Morkoç, Hadis
Vydáno: (2013)
Autor: Morkoç, Hadis
Vydáno: (2013)
Nitride semiconductor devices fundamentals and applications /
Autor: Morkoç, Hadis
Vydáno: (2013)
Autor: Morkoç, Hadis
Vydáno: (2013)
Advances in silicon carbide processing and applications
Vydáno: (2004)
Vydáno: (2004)
Advances in silicon carbide processing and applications
Vydáno: (2004)
Vydáno: (2004)
Mikrohohlkugelgefulltes Silikongel als Isolierstoff in der Hochspannungstechnik
Autor: Belz, Oliver
Vydáno: (2011)
Autor: Belz, Oliver
Vydáno: (2011)
Mikrohohlkugelgefulltes Silikongel als Isolierstoff in der Hochspannungstechnik
Autor: Belz, Oliver
Vydáno: (2011)
Autor: Belz, Oliver
Vydáno: (2011)
HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France /
Vydáno: (2012)
Vydáno: (2012)
HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France /
Vydáno: (2012)
Vydáno: (2012)
Advances in semiconducting materials /
Vydáno: (2009)
Vydáno: (2009)
Advances in semiconducting materials /
Vydáno: (2009)
Vydáno: (2009)
NEMS/MEMS technology and devices : selected, peer reviewed papers from the International conference on materials for advanced technologies (ICMAT 2011), Symposium G: June 26 - July 1, 2011, Suntec, Singapore /
Vydáno: (2011)
Vydáno: (2011)
NEMS/MEMS technology and devices : selected, peer reviewed papers from the International conference on materials for advanced technologies (ICMAT 2011), Symposium G: June 26 - July 1, 2011, Suntec, Singapore /
Vydáno: (2011)
Vydáno: (2011)
Semiconductor materials an introduction to basic principles /
Autor: Yacobi, B. G.
Vydáno: (2003)
Autor: Yacobi, B. G.
Vydáno: (2003)
Semiconductor materials an introduction to basic principles /
Autor: Yacobi, B. G.
Vydáno: (2003)
Autor: Yacobi, B. G.
Vydáno: (2003)
Compound semiconductor bulk materials and characterizations
Autor: Oda, O.
Vydáno: (2007)
Autor: Oda, O.
Vydáno: (2007)
Compound semiconductor bulk materials and characterizations
Autor: Oda, O.
Vydáno: (2007)
Autor: Oda, O.
Vydáno: (2007)
Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces /
Autor: Xia, Chao
Vydáno: (2015)
Autor: Xia, Chao
Vydáno: (2015)
Characterizations of as grown and functionalized epitaxial graphene grown on SiC surfaces /
Autor: Xia, Chao
Vydáno: (2015)
Autor: Xia, Chao
Vydáno: (2015)
Proceedings of the 10th Asian Conference on Solid State Ionics advanced materials for emerging technologies : Kandy, Sri Lanka, 12-16 June 2006 /
Vydáno: (2006)
Vydáno: (2006)
Podobné jednotky
-
Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine /
Vydáno: (2011) -
Semiconductor strain metrology principles and applications /
Autor: Wong, Terence K. S.
Vydáno: (2012) -
Semiconductor strain metrology principles and applications /
Autor: Wong, Terence K. S.
Vydáno: (2012) -
SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors /
Autor: Omura, Y. (Yasuhisa)
Vydáno: (2013) -
SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors /
Autor: Omura, Y. (Yasuhisa)
Vydáno: (2013)